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IMBF170R450M1
  • IMBF170R450M1

IMBF170R450M1

Active and preferred

CoolSiC™ 1700 V, 450 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.

Infineon Technologies IMBF170R450M1 Product Info

16 April 2026 1

Parameters

Ciss

610 pF

Coss

16 pF

ID (@25°C) max

9.8 A

Mounting

SMD

Operating Temperature range

-55 °C to 175 °C

Package

TO-263-7

Pin Count

7 Pins

Polarity

N

Ptot (@ TA=25°C) max

107 W

Qgd

5.9 nC

QG

11 nC

Qualification

Industrial

RDS (on) (@ Tj = 25°C)

450 mΩ

RthJA max

62 K/W

RthJC max

1.3 K/W

Technology

CoolSiC™ G1

Tj max

175 °C

VDS max

1700 V

Apps

DIN rail power supply solutions, Industrial motor drives and controls, General purpose motor drive, Photovoltaic, Residential air conditioning, Power conversion

Features

  • Optimized for fly-back topologies
  • Extremely low switching loss
  • 12 V / 0 V gate-source voltage
  • Compatible with fly-back controller
  • Fully controllable dV/dt
  • SMD package
  • Enhanced creepage distances > 7 mm
  • And clearance distances, > 7 mm

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