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IGT60R190D1
  • IGT60R190D1

IGT60R190D1

The IGT60R190D1 enables more compact topologies and increased efficiency at higher frequency operation. It is certified through an extensive GaN-specific qualification process, exceeding industry standards. Housed in the bottom-side cooled HSOF-8 (TO-leadless) package, it is designed for optimal power dissipation required in modern data centers, server , telecom , renewables and numerous other applications.

Infineon Technologies IGT60R190D1 Product Info

16 April 2026 1

Parameters

Green

RoHS compliant, Halogen free

ID (@ TA=25°C) max

12 A

IDpuls (@25°C) max

23 A

Product Name

IGT60R190D1

QG

3.2 nC

RDS (on) (typ)

140 mΩ

VDS max

600 V

Features

  • E-mode HEMT – normally OFF
  • Ultrafast switching
  • No reverse-recovery charge
  • Capable of reverse conduction
  • Low gate charge, low output charge
  • Superior commutation ruggedness
  • JEDEC qualified (JESD47, JESD22)
  • Low dynamic RDS(on)
  • Bottom-side cooled

Description

  • Improves system efficiency
  • Improves power density
  • Enables higher operating frequency
  • System cost reduction savings
  • Reduces EMI

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