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IGLD65R080D2
  • IGLD65R080D2

IGLD65R080D2

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The IGLD65R080D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled DFN package, it is designed for optimal power dissipation in various industrial and consumer applications.

Infineon Technologies IGLD65R080D2 Product Info

16 April 2026 1

Parameters

Family

CoolGaN™ Transistor 650 V G5

Green

RoHS compliant, Halogen free

ID (@25°C) max

18 A

IDpuls (@25°C) max

42 A

Package

DFN 8x8

Planned to be available until at least

2035

QG

3.3 nC

Qualification

Industrial

RDS (on) max

96 mΩ

RDS (on) (typ)

80 mΩ

VDS max

650 V

Apps

Data center power solutions, AC-DC power conversion for telecommunications infrastructure, USB-C chargers and adapters, Photovoltaic, Power conversion

Features

  • 650 V e-mode power transistor
  • Ultrafast switching
  • No reverse-recovery charge
  • Capable of reverse conduction
  • Low gate charge, low output charge
  • Superior commutation ruggedness
  • Low dynamic RDS(on)
  • High ESD robustness: 2 kV HBM - 1 kV CDM
  • Bottom-side cooled package
  • JEDEC qualified (JESD47, JESD22)

Description

  • Supports high operating frequency
  • Enables highest system efficiency
  • Enables ultrahigh power density designs
  • Supports BOM cost savings

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