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IGI60L5050A1M
  • IGI60L5050A1M

IGI60L5050A1M

The IGI60L5050A1M combines a half-bridge power stage consisting of two GaN HEMTs with level shifters in a small 6 x 8 mm PG-TFLGA-27-2 package. The device uses the Infineon CoolGaN™ GIT which offers the highest Figure-of-Merit (FOM) and robustness. The internal bootstrap diode means that with minimal external components, designers can achieve full control to tune the rise/fall times while maintaining a simple system BOM. This is ideally suited to support the design of compact appliances in the low power applications.

Infineon Technologies IGI60L5050A1M Product Info

16 April 2026 0

Parameters

Green

RoHS compliant, Halogen free

ID (@ TA=25°C) max

3.9 A

IDpuls (@25°C) max

6.4 A

Product Name

IGI60L5050A1M

QG

0.58 nC

RDS (on) (typ)

500 mΩ

VDS max

600 V

Features

  • Integrated driver with bootstrap diode
  • Application configurable switching behavior
  • Low profile TFLGA 6x8 package

Description

  • Low system BOM
  • Configurability of gate path with low inductance loop on PCB for optimizing of motor control
  • Allows short dead-time for maximum system efficiency 
  • Small package for compact system design by integration of bootstrap diode

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