IDWD40G120C5

Active and preferred

CoolSiC™ Schottky diode 1200 V, 40 A G5 in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes. The expanded 8.7 mm creepage and clearance distances offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative. The output power of PFC and DC-DC stages can thus be increased, by 40% or more.

Infineon Technologies IDWD40G120C5 Product Info

16 April 2026 0

Parameters

I(FSM) max	290 A
IF max	109 A
IR	23 A
Package	PG-TO247-2
Ptot max	402 W
QC	202 nC
Qualification	Industrial
RthJC	0.27 K/W
VF	1.4 V

Apps

EV charging, DIN rail power supply solutions, Servo motor drive and control, Photovoltaic, 1-phase string inverter solutions, Power conversion, Uninterruptible power supplies (UPS)

Features

No reverse recovery current
No forward recovery voltage
Temp.-independ. switching behavior
Low forward voltage*
*even at high operating temperature
Tight forward voltage distribution
High surge current capability

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IDWD40G120C5

Infineon Technologies IDWD40G120C5 Product Info

Parameters

Apps

Features

SUBMITTED SUCCESSFULLY！

ELECTRONIC COMPONENTS All In One Distributor

IDWD40G120C5

Infineon Technologies IDWD40G120C5 Product Info

Parameters

Apps

Features

SUBMITTED SUCCESSFULLY！

ELECTRONIC COMPONENTS
All In One Distributor