IDH10G120C5

Active and preferred

The CoolSiC™ Schottky diode generation 5 1200 V, 10 A in a TO-220 real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point..

Infineon Technologies IDH10G120C5 Product Info

16 April 2026 0

Parameters

I(FSM) max	99 A
IF max	10 A
IR	4 µA
Package	PG-TO220-2
Ptot max	165 W
QC	41 nC
Qualification	Industrial
RthJC	0.7 K/W
VF	1.5 V

Apps

Telecommunications infrastructure, DIN rail power supply solutions, Photovoltaic, Central inverter solutions, Motor control, Uninterruptible power supplies (UPS)

Features

Best-in-class forward voltage (V_F)
No reverse recovery charge
Mild positive temp. depend. of V_F
Best-in-class surge current capab.
Excellent thermal performance

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IDH10G120C5

Infineon Technologies IDH10G120C5 Product Info

Parameters

Apps

Features

SUBMITTED SUCCESSFULLY！

ELECTRONIC COMPONENTS All In One Distributor

IDH10G120C5

Infineon Technologies IDH10G120C5 Product Info

Parameters

Apps

Features

SUBMITTED SUCCESSFULLY！

ELECTRONIC COMPONENTS
All In One Distributor