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IDB18E120
  • IDB18E120

IDB18E120

The 1200 V, 18 A emitter controlled silicon power diode in a D2PAK TO-263 package displays excellent softness and VF behaviour and is qualified with a T j(max) of 150°C. The diodes are also available halogen-free according to IEC61249-2-21.

Infineon Technologies IDB18E120 Product Info

16 April 2026 0

Parameters

Configuration

Single

I(FSM) max

78 A

IF max

31 A

IF

18 A

IR max

100 µA

Irrm

20.2 A

Mounting

SMT

Operating Temperature range

-55 °C to 150 °C

Package

TO-220

Ptot max

113 W

Qrr

1880 nC

RthJC max

1.1 K/W

trr

195 ns

VF max

2.15 V

VF

1.65 V

Voltage Class max

1200 V

Features

  • Lowest VF values
  • Softest diodes avail. on the market
  • Tj(max) of 175°C
  • Qualified according to JEDEC
  • Cooler packages & higher efficiency
  • Excellent EMI behavior
  • Excellent cost/perform. trade-off
  • Low conduction losses
  • Easy paralleling

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