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IAUTN15S6N025
  • IAUTN15S6N025

IAUTN15S6N025

Active and preferred

IAUTN15S6N025 is built with Infineon’s leading-edge, power semiconductor technology OptiMOS™ 6 150V. It is offered in our versatile, robust, high current TOLL 10x12 mm² SMD package and designed for high performance, high quality and robustness needed for demanding automotive applications. Key characteristics include RoHS compliance, MSL1 rating, automotive quality beyond AEC-Q101, PPAP capability, and delivery in tape and reel format.

Infineon Technologies IAUTN15S6N025 Product Info

16 April 2026 10

Parameters

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Germany

ID (@25°C) max

245 A

IDpuls max

946 A

Launch year

2025

Operating Temperature range

-55 °C to 175 °C

Package

TOLL (PG-HSOF-8-1)

Polarity

N

QG (typ @10V) max

139 nC

QG (typ @10V)

107 nC

Qualification

Automotive

RDS (on) (@10V) max

2.5 mΩ

RthJC max

0.42 K/W

Technology

OptiMOS™6

VDS max

150 V

VGS(th) range

3 V to 4 V

VGS(th)

3.5 V

Apps

BMS (electric two- & three-wheelers), Traction inverter (electric two- & three-wheelers), DC-DC converter high-voltage, DC-DC converter high-voltage (commercial vehicles), On-board charging (OBC)

Features

  • Breakdown voltage of 150V
  • Low RDS(on) → lowest conduction losses
  • N-ch.-Enhancement mode-Normal Level
  • Tight distribution of VGS(th)
  • 175°C operating temperature
  • High avalanche capability

Description

  • High power density
  • By far industry’s lowest RDS(on)
  • High ID for high-power applications
  • High switching performance

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