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IAUTN12S5N018G
  • IAUTN12S5N018G

IAUTN12S5N018G

Active and preferred

The IAUTN12S5N018G is a 1.8 mΩ, 120 V MOSFET coming in the TOLG package with Infineon’s leading OptiMOS™ 5 technology. Next to other applications, the device is designed for HV-LV DCDC converter.

Infineon Technologies IAUTN12S5N018G Product Info

16 April 2026 0

Parameters

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Germany

ID (@25°C) max

300 A

Launch year

2023

Operating Temperature range

-55 °C to 175 °C

Planned to be available until at least

2038

Polarity

N

QG (typ @10V)

111 nC

QG (typ @10V) max

145 nC

Qualification

Automotive

RDS (on) (@10V) max

1.8 mΩ

Technology

OptiMOS™5

VDS max

120 V

VGS(th) range

2.6 V to 3.6 V

VGS(th)

3.1 V

Apps

DC-DC converter high-voltage, On-board charging (OBC)

Features

  • OptiMOS™ 5 power MOSFET
  • N-channel–Enhancement mode–Normal Level
  • AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested
  • PPAP Capable Device

Description

  • Ideal for HV-LV DCDC converter
  • Also available in TOLL and TOLT package

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