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IAUMN04S7N005G
  • IAUMN04S7N005G

IAUMN04S7N005G

Active and preferred

IAUMN04S7N005G is a high-performance, N-channel OptiMOS™ automotive power MOSFET. With an extended qualification beyond AEC-Q101, enhanced electrical testing, and a robust design, this device ensures reliable operation in harsh environments. Operating temperatures range from -55 to 175°C, MSL2 up to 260°C peak reflow, and 100% avalanche testing make it ideal for demaning automotive applications.

Infineon Technologies IAUMN04S7N005G Product Info

16 April 2026 0

Parameters

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Austria, Germany

ID (@25°C) max

250 A

Launch year

2025

Operating Temperature range

-55 °C to 175 °C

Planned to be available until at least

2038

Polarity

N

QG (typ @10V) max

185 nC

QG (typ @10V)

142 nC

Qualification

Automotive

RDS (on) (@10V) max

0.5 mΩ

Technology

OptiMOS™7

VDS max

40 V

VGS(th) range

2.2 V to 3 V

VGS(th)

2.6 V

Features

  • Low RDS(on) in 8x8 mm2
  • High avalanche capability
  • High SOA ruggedness
  • Fast switching times (on/off)
  • Leadless packages with Cu-Clip
  • Thin wafer Cu-technology
  • 300 mm in-house production
  • Gullwing package with long leads
  • PPAP Capable Device

Description

  • High power density in 8x8
  • Increased current capability
  • Improved design ruggedness
  • Good switching performance
  • Efficient cooling in 8x8m mm2
  • Automotive quality package
  • Automotive quality production
  • High TCOB performance on IMS

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