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IAUCN10S7N021
  • IAUCN10S7N021

IAUCN10S7N021

Active and preferred

Infineon introduces its first MOSFET in our next, leading edge, power technology; OptiMOS™ 7 100V. This debut product is offered in our versatile, robust, high current SSO8 5x6mm2 SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications. IAUCN10S7N021 is a true step forward in the category of power density.

Infineon Technologies IAUCN10S7N021 Product Info

16 April 2026 0

Parameters

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Austria, Germany

ID (@25°C) max

175 A

Launch year

2024

Operating Temperature range

-55 °C to 175 °C

Package

PG-TDSON-8

Planned to be available until at least

2038

Polarity

N

QG (typ @10V)

81 nC

QG (typ @10V) max

105 nC

Qualification

Automotive

RDS (on) (@10V) max

2.1 mΩ

Technology

OptiMOS™7

VDS max

100 V

VGS(th) range

2.3 V to 3.2 V

VGS(th)

2.8 V

Features

  • RDS(on) reduced 47% from prior best
  • Industry’s best RDS(on)
  • Fast switching times (turn on/off)
  • Industry's best FOM (RDS(on) x Qg)
  • Low package resistance and inductance
  • High avalanche current capability
  • High SOA ruggedness
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • PPAP Capable Device

Description

  • Minimized conduction losses
  • Superior switching performance
  • Increased current carrying capability
  • Highest power density in 5x6mm package
  • High power efficiency
  • Small footprint & efficient cooling
  • Tight VGS(th); good for parallel use
  • Increased design ruggedness
  • Designed for Automotive robustness
  • High quality production for Automotive

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