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IAUCN10S7L180
  • IAUCN10S7L180

IAUCN10S7L180

Active and preferred

IAUCN10S7L180 is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 100 V. This product is offered in our versatile, robust, high current SSO8 5x6 mm2 SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications.

Infineon Technologies IAUCN10S7L180 Product Info

16 April 2026 0

Parameters

Country of Assembly (Last BE site, current, subject to change)

Indonesia, Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Austria, Germany

ID (@25°C) max

39 A

Launch year

2024

Operating Temperature range

-55 °C to 175 °C

Package

Single SSO8

Planned to be available until at least

2038

Polarity

N

QG (typ @10V) max

14.3 nC

QG (typ @10V)

11 nC

Qualification

Automotive

RDS (on) (@10V) max

18 mΩ

Technology

OptiMOS™7

VDS max

100 V

VGS(th) range

1.2 V to 2 V

VGS(th)

1.6 V

Features

  • Fast switching times (turn on/off)
  • Low on-resistance, RDS(on)
  • Leading edge FOM (RDS(on) x Qg)
  • High avalanche current capability
  • High SOA ruggedness
  • Tight threshold voltage, VGS(th), range
  • Excellent thermal performance
  • Low package resistance and inductance
  • Unique fused source pins
  • Extended qualification beyond AEC-Q101
  • MSL1 up to 260°C peak reflow
  • PPAP Capable Device

Description

  • Superior switching performance
  • Very low conduction losses
  • Highest power density in 5x6 mm2 package
  • High power efficiency
  • Well suited for parallel placement
  • Increased design ruggedness
  • Better solder joint reliability
  • Designed for automotive robustness
  • High quality production for automotive
  • Enhanced electrical testing

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