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IAUCN08S7N024
  • IAUCN08S7N024

IAUCN08S7N024

Active and preferred

Infineon introduces another MOSFET in our next, leading edge, power technology; OptiMOS™ 7 80V. This product is offered in our versatile, robust, high current SSO8 5x6mm2 SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications.

Infineon Technologies IAUCN08S7N024 Product Info

16 April 2026 0

Parameters

Country of Assembly (Last BE site, current, subject to change)

Indonesia, Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Austria, Germany, South Korea

ID (@25°C) max

165 A

Launch year

2024

Operating Temperature range

-55 °C to 175 °C

Package

PG-TDSON-8

Planned to be available until at least

2038

Polarity

N

QG (typ @10V) max

67 nC

QG (typ @10V)

51.5 nC

Qualification

Automotive

RDS (on) (@10V) max

2.4 mΩ

Technology

OptiMOS™7

VDS max

80 V

VGS(th) range

2.3 V to 3.2 V

VGS(th)

2.8 V

Features

  • RDS(on) better than prior best
  • Leading edge FOM (RDS(on) x Qg)
  • Fast switching times (turn on/off)
  • Low package resistance and inductance
  • High avalanche current capability
  • High SOA ruggedness
  • Excellent thermal performance
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • PPAP Capable Device

Description

  • Very low conduction losses
  • Superior switching performance
  • Highest power density in 5x6mm package
  • High power efficiency
  • Small footprint & efficient cooling
  • Increased design ruggedness
  • Designed for Automotive robustness
  • High quality production for Automotive

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