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IAUCN08S7L024
  • IAUCN08S7L024

IAUCN08S7L024

Active and preferred

Infineon introduces another MOSFET in our next, leading edge, power technology; OptiMOS™ 7 80V.  This product is offered in our versatile, robust, high current SSO8 5x6mm² SMD package.  It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications.

Infineon Technologies IAUCN08S7L024 Product Info

16 April 2026 10

Parameters

Country of Assembly (Last BE site, current, subject to change)

Indonesia, Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Austria, Germany

ID (@25°C) max

150 A

Launch year

2025

Operating Temperature range

-55 °C to 175 °C

Package

PG-TDSON-8

Planned to be available until at least

2038

Polarity

N

QG (typ @10V) max

84.8 nC

QG (typ @10V)

65.2 nC

Qualification

Automotive

RDS (on) (@10V) max

2.4 mΩ

Technology

OptiMOS™7

VDS max

80 V

VGS(th) range

1.2 V to 2 V

VGS(th)

1.6 V

Apps

Domain controller for ADAS & autonomous driving, Auxiliary motor control 48 V, Automotive power distribution, Zonal DC-DC converter 48 V-12 V, Zone control unit, Automotive battery management system (BMS) - 48 V, Automotive battery protection & disconnection, Automotive electric pumps & fans 48 V, Light electric vehicle solutions

Features

  • Low on-resistance, RDS(on)
  • Leading edge FOM (RDS (on) x Qg)
  • Fast switching times (turn on/off)
  • Low package resistance and inductance
  • High avalanche current capability
  • High SOA ruggedness
  • Excellent thermal performance
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature

Description

  • Very low conduction losses
  • Superior switching performance
  • Highest power density in 5x6mm package
  • High power efficiency
  • Small footprint & efficient cooling
  • Increased design ruggedness
  • Designed for Automotive robustness
  • High quality production for Automotive

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