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IAUC90N10S5N062
  • IAUC90N10S5N062

IAUC90N10S5N062

Active and preferred

Infineon Technologies IAUC90N10S5N062 Product Info

16 April 2026 0

Parameters

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Austria, Germany

ID (@25°C) max

90 A

Launch year

2019

Operating Temperature range

-55 °C to 175 °C

Package

PG-TDSON-8

Planned to be available until at least

2038

Polarity

N

QG (typ @10V)

36 nC

QG (typ @10V) max

48 nC

Qualification

Automotive

RDS (on) (@10V) max

6.2 mΩ

Technology

OptiMOS™5

VDS max

100 V

VGS(th) range

2.2 V to 3.8 V

VGS(th)

3 V

Apps

Space applications, Domain controller for ADAS & autonomous driving, Multi-purpose camera, DC-DC converter high-voltage

Features

  • OptiMOS™ 5 power MOSFET for automotive
  • N-channel-Enhancement mode-Normal Level
  • AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested
  • Automotic Optical Inspection viable
  • PPAP Capable Device

Description

  • Extended qualification beyond AEC Q101
  • Enhanced testing
  • Advanced adhesion against delamination
  • Board-level reliability test

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