Product
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IAUC60N04S6N044
  • IAUC60N04S6N044

IAUC60N04S6N044

Active and preferred

Introducing OptiMOS™ 6 40V MOS technology in a 5x6mm² SSO8 leadless package for robust automotive applications. The portfolio features 16 products (RDS(on) max from 0.8mΩ to 4.4mΩ), ideal for low- and high-power needs. The package offers best-in-class FOM (RDS(on) x Qg) and 120A continuous current ratings, >25% higher than standard DPAK, along with superior switching performance and EMI behavior (≈4x lower inductivity vs. traditional packages).

Infineon Technologies IAUC60N04S6N044 Product Info

16 April 2026 0

Parameters

Country of Assembly (Last BE site, current, subject to change)

Indonesia, Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Austria, Germany

ID (@25°C) max

60 A

Launch year

2019

Operating Temperature range

-55 °C to 175 °C

Package

PG-TDSON-8

Planned to be available until at least

2032

Polarity

N

QG (typ @10V) max

18 nC

QG (typ @10V)

13 nC

Qualification

Automotive

RDS (on) (@10V) max

4.4 mΩ

Technology

OptiMOS™6

VDS max

40 V

VGS(th) range

2.2 V to 3 V

VGS(th)

2.6 V

VGS range

2.2 V to 3 V

Apps

Automotive body electronics & power distribution, Chassis control & safety, Active suspension control, Electric brake booster

Features

  • OptiMOS™ power MOSFET
  • N-channel-Enhancement mode-Normal Level
  • AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested
  • PPAP Capable Device

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