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GS-065-030-2-L-TR
  • GS-065-030-2-L-TR

GS-065-030-2-L-TR

The GS-065-030-2-L-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency.  The GS-065-030-2-L-TR is a bottom-side cooled transistor in a 8x8 mm PDFN package that enables ideal power disspation as required in high power server and data center power supplies and industrial use power applications.

Infineon Technologies GS-065-030-2-L-TR Product Info

16 April 2026 0

Parameters

Green

RoHS compliant, Halogen free

ID (@25°C) max

30 A

IDpuls (@25°C) max

60 A

Package

PDFN

QG

6.7 nC

Qualification

Industrial

RDS (on) (typ)

50 mΩ

RDS (on) max

68 mΩ

VDS max

650 V

Apps

AC-DC power conversion for telecommunications infrastructure, Industrial, Power conversion

Features

  • E-mode HEMT – normally OFF
  • Ultrafast switching
  • No reverse-recovery charge
  • Capable of reverse conduction
  • Low gate charge, low output charge
  • Superior commutation ruggedness
  • JEDEC qualified (JESD47, JESD22)
  • Bottom-side cooled
  • Zero reverse recovery loss
  • Source Sense pad for optimal gate drive
  • Fast, controllable fall and rise times
  • RoHS 3(6+4) compliant

Description

  • Improves system efficiency
  • Improves power density
  • Reduces system weight
  • Enables higher operating frequency
  • System cost reduction savings
  • Reduces EMI

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