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FF17MR12W1M1HP_B11
  • FF17MR12W1M1HP_B11

FF17MR12W1M1HP_B11

Active and preferred

EasyDUAL™ 1B 1200 V, 17 mΩ half-bridge module with CoolSiC™ MOSFET enhanced generation 1, integrated NTC temperature sensor, pre-applied thermal interface material and PressFIT Contact Technology

Infineon Technologies FF17MR12W1M1HP_B11 Product Info

16 April 2026 1

Parameters

Applications

Solar, UPS, EV Charger, ESS

Configuration

Half-bridge

Dimensions (length)

62.8 mm

Dimensions (width)

33.8 mm

Features

PressFIT, TIM

Housing

Easy 1B

Qualification

Industrial

RDS (on) (@ Tj = 25°C)

17 mΩ

Apps

EV charging, Photovoltaic, Uninterruptible power supplies (UPS)

Features

  • Best-in-class package: 12 mm height
  • Easy module packages
  • Very low module stray inductance
  • Wide RBSOA
  • 1200 V CoolSiC™ MOSFET
  • Gate drive vol.: +15…+18 V & 0…-5 V
  • Max. gate-source v.: +23 V & -10 V
  • Tvjop under overload condi. < 175°C
  • PressFIT pins
  • Integrated NTC temperature sensor
  • Thermal interface material

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