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F3L11MR12W2M1_B74
  • F3L11MR12W2M1_B74

F3L11MR12W2M1_B74

Active and preferred

EasyPACK™ 2B CoolSiC™ MOSFET 3-level module in ANPC topology 1200 V, 11mΩ G1 with NTC and PressFIT contact technology.

Infineon Technologies F3L11MR12W2M1_B74 Product Info

16 April 2026 0

Parameters

Applications

ESS, SST, Solar, EV Charger

Configuration

3-Level

Dimensions (length)

62.8 mm

Dimensions (width)

48 mm

Features

PressFIT, phase leg

Housing

Easy 2B

Qualification

Industrial

RDS (on) (@ Tj = 25°C)

11.3 mΩ

Apps

Battery energy storage (BESS), EV charging, Photovoltaic, Uninterruptible power supplies (UPS)

Features

  • Best-in-class packages with 12 mm height
  • Leading edge WBG material
  • Very low module stray inductance
  • Enhanced CoolSiC™ MOSFET Gen 1
  • Enlarged gate drive voltage window
  • Gate-source voltages of +20 V and -10 V
  • PressFIT pins
  • Integrated NTC temperature sensor

Description

  • Outstanding module efficiency
  • System cost advantages
  • System efficiency improvement
  • Reduced cooling requirements
  • Enabling higher frequency
  • Increase of power density

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