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DF80R12W2H3F_B11
  • DF80R12W2H3F_B11

DF80R12W2H3F_B11

Active and preferred

EasyPACK™ 2B 1200 V, 160 A chopper IGBT module with CoolSiC™ Schottky diode 1200V , PressFIT technology and High Speed IGBT H3.

Infineon Technologies DF80R12W2H3F_B11 Product Info

16 April 2026 0

Parameters

Configuration

Booster

Dimensions (length)

56.7 mm

Dimensions (width)

48 mm

Features

PressFIT, SiC Schottky diode

Housing

EasyPACK™ 2B

IC(nom) / IF(nom)

80 A

IC max

80 A

Qualification

Industrial

Technology

IGBT3 - H3

VCE(sat) (Tvj=25°C typ)

1.55 V

VF (Tvj=25°C typ)

1.6 V

Voltage Class max

1200 V

Apps

Photovoltaic

Features

  • Low switching losses
  • Al2O3 substrate
  • Integrated NTC temperature sensor

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