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DF80R07W1H5FP_B11
  • DF80R07W1H5FP_B11

DF80R07W1H5FP_B11

Active and preferred

EasyPACK™ 650 V, 100 A booster IGBT module with TRENCHSTOP™ 5 H5 , CoolSiC™ Schottky diode , PressFIT contact technology and pre-applied Thermal Interface Material .

Infineon Technologies DF80R07W1H5FP_B11 Product Info

16 April 2026 1

Parameters

Configuration

Booster

Features

TIM, PressFIT, SiC Schottky diode

Housing

EasyPACK™ 1B

IC(nom) / IF(nom)

80 A

IC max

80 A

Qualification

Industrial

Technology

IGBT5 - H5

VCE(sat) (Tvj=25°C typ)

1.4 V

VF (Tvj=25°C typ)

1.6 V

Voltage Class max

650 V

Apps

Photovoltaic, 1-phase string inverter solutions

Features

  • Blocking voltage capability < 650 V
  • Low switching losses
  • Low inductive design
  • Al2O3 substrate
  • Integrated NTC temperature sensor

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