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DF200R12W1H3_B27
  • DF200R12W1H3_B27

DF200R12W1H3_B27

Active and preferred

EasyPACK™ 1B 1200 V, 200 A booster IGBT modules with the proven PressFIT technology and High Speed IGBT H3.

Infineon Technologies DF200R12W1H3_B27 Product Info

16 April 2026 1

Parameters

Configuration

Booster

Dimensions (width)

33.8 mm

Dimensions (length)

48 mm

Features

PressFIT

Housing

EasyPACK™ 1B

IC(nom) / IF(nom)

200 A

IC max

200 A

Qualification

Industrial

Technology

IGBT3 - H3

VCE(sat) (Tvj=25°C typ)

1.3 V

VF (Tvj=25°C typ)

2 V

Voltage Class max

1200 V

Apps

Photovoltaic

Features

  • High Speed IGBT H3
  • Low switching losses
  • Fast Silicon diode 1200V
  • Al2O3 substrate
  • Integrated NTC temperature sensor
  • PressFIT contact technology

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