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DF100R07W1H5FP_B53
  • DF100R07W1H5FP_B53

DF100R07W1H5FP_B53

Active and preferred

EasyPACK™ 650 V, 100 A booster IGBT module with TRENCHSTOP™ 5 H5 , CoolSiC™ Schottky diode , PressFIT contact technology and pre-applied Thermal Interface Material .

Infineon Technologies DF100R07W1H5FP_B53 Product Info

16 April 2026 0

Parameters

Configuration

Booster

Features

PressFIT, TIM

Housing

EasyPACK™ 1B

IC(nom) / IF(nom)

100 A

IC max

100 A

Qualification

Industrial

Technology

IGBT5 - H5

VCE(sat) (Tvj=25°C typ)

1.35 V

VF (Tvj=25°C typ)

1.6 V

Voltage Class max

650 V

Apps

Battery energy storage (BESS), 1-phase string inverter solutions

Features

  • Blocking voltage capab. up to 650 V
  • Low switching losses
  • Low inductive design
  • Al2O3 substrate
  • Integrated NTC temperature sensor

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