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DD800S45KL3_B5
  • DD800S45KL3_B5

DD800S45KL3_B5

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4500 V IHV , 800 A 130mm Diode IGBT module with Emitter Controlled C3 Diode, predestined to be combined with IGBT products (e.g. FZ1200R45KL3_B5 or FZ800R45KL3_B5 ) - The best solution for your traction and industry applications.

Infineon Technologies DD800S45KL3_B5 Product Info

16 April 2026 0

Parameters

Configuration

Diodes

Dimensions (width)

140 mm

Dimensions (length)

130 mm

Features

10.4 kV isolation

Housing

IHV

IC(nom) / IF(nom)

800 A

IC max

800 A

Qualification

Industrial, Traction

Rated Current

800 A

Technology

Diode

VCES / VRRM

4500 V

VF (Tvj=25°C typ)

2.5 V

Voltage Class max

4500 V

Apps

Medium voltage (MV) drive, Traction, Wind power, Motor control

Features

  • High DC stability
  • High surge current capability
  • Extended storage temperature
  • * down to T(stg) = -55°C
  • Package with CTI > 600
  • Package insulation 10.4 kV AC 1min
  • High creepage & clearance distances
  • AlSiC base plate with AlN substrate
  • for increased Thermal cycling
  • Fire & smoke EN45545 R22, R23 : HL3
  • Dual Diode

Description

  • Standardized housing: 130x140x48 mm
  • decades of field experience
  • Long service life
  • Tough against overloads & faults
  • Low FIT Rate

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