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CYRS16B512-133FZMB
  • CYRS16B512-133FZMB

CYRS16B512-133FZMB

Active and preferred

Infineon’s radiation tolerant, the CYRS16B and CYPT16B, serial NOR Flash family offers the industry’s highest performance, small footprint memory devices that are QML-V equivalent qualifiedOur radiation tolerant NOR flash memories are low pin count, low power and offer flexibility, reliability and performance well beyond ordinary serial flash devices. The industry standard QSPI interface is high performance and simple to use with broad ecosystem support.

Infineon Technologies CYRS16B512-133FZMB Product Info

16 April 2026 0

Parameters

Density

512 MBit

Device weight

3878.7 mg

Family

FL-L

Frequency

133 MHz

Interface Bandwidth

133 MByte/s

Interface Frequency (SDR/DDR) (MHz)

133 / -

Interfaces

Dual-Quad SPI

Lead Ball Finish

Ni/Au

Operating Temperature range

-55 °C to 125 °C

Operating Voltage range

2.7 V to 3.6 V

Organization (X x Y)

x8

Peak Reflow Temp

220 °C

Planned to be available until at least

2030

Qualification

Military

Features

  • 512 Mb density
  • QSPI / dual QSPI
  • 50MHz SDR (read) clock rate
  • 133MHz SDR fast dual quad read clockrate
  • 66MHz DDR (quad read) clock rate
  • 1000 progr/sector erase endurance cycles
  • 100-year data retention
  • 270ms typical sector erase time 64 KByte
  • 2.7 V to 3.6 V operating voltage range
  • Low operating current (10 mA max)
  • –55°C to +125°C military temp grade

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