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CYEL15B102N-ZS60XM
  • CYEL15B102N-ZS60XM

CYEL15B102N-ZS60XM

Active and preferred

Our radiation tolerant, parallel interface, SPI Ferroelectric RAM (F-RAM) is one of the industry’s lowest power, non-volatile memory solutions that is guaranteed to 50 Krad (Si) TID and virtually unlimited endurance. Infineon’s instant non-volatile write technology and greater than 100-year data retention provides the highest reliability for space applications.

Infineon Technologies CYEL15B102N-ZS60XM Product Info

16 April 2026 0

Parameters

Density

2 MBit

Family

F-RAM

Interfaces

Parallel

Lead Ball Finish

NiPdAu and Pure Sn

Operating Temperature range

-55 °C to 125 °C

Operating Voltage range

2 V to 3.6 V

Organization (X x Y)

128Kx16

Package

PG-TSOP-44

Peak Reflow Temp

260 °C

Qualification

Military

Features

  • 2 Mb density
  • 128K x 16, parallel interface
  • 60ns access time
  • Infineon instant non-volatile write technology
  • 10-trillon read/write cycle endurance
  • 120 years data retention at +85°C
  • Extremely low programming voltage (2V)
  • 2.0 V–3.6 V operating voltage range
  • Low operating current (10 mA max)
  • –55°C to +125°C military temperature grade
  • 44-pin TSOP package

Description

  • AEC-Q006 compliant
  • ROHS compliant
  • 50 Krad (Si) TID radiation performance
  • Single Lot Date Code (SLDC)
  • 100% electrical testing coverage
  • Certificate of Conformance (CoC)

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