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CY7C25632KV18-500BZXI
  • CY7C25632KV18-500BZXI

CY7C25632KV18-500BZXI

Infineon Technologies CY7C25632KV18-500BZXI Product Info

16 April 2026 0

Parameters

Architecture

QDR-II+, ODT

Bank Switching

N

Burst Length (Words)

4

Data Width

x 18

Density

72 MBit

ECC

N

Family

QDR-II+, ODT

Frequency

500 MHz

Interfaces

Parallel

Lead Ball Finish

Sn/Ag/Cu

On-Die Termination

Y

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

1.7 V to 1.9 V

Organization (X x Y)

4Mb x 18

Peak Reflow Temp

260 °C

Qualification

Industrial

Read Latency (Cycles)

2.5

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