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CY7C1418KV18-250BZXI
  • CY7C1418KV18-250BZXI

CY7C1418KV18-250BZXI

Infineon Technologies CY7C1418KV18-250BZXI Product Info

16 April 2026 1

Parameters

Architecture

DDR-II CIO

Bank Switching

N

Burst Length (Words)

2

Data Width

x 18

Density

36 MBit

ECC

N

Family

DDR-II CIO

Frequency

250 MHz

Interfaces

Parallel

Lead Ball Finish

Sn/Ag/Cu

On-Die Termination

N

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

1.7 V to 1.9 V

Organization (X x Y)

2Mb x 18

Peak Reflow Temp

260 °C

Qualification

Industrial

Read Latency (Cycles)

1.5

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