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CY14V104LA-BA45XI
  • CY14V104LA-BA45XI

CY14V104LA-BA45XI

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CY14V104LA-BA45XI is a 4-Mbit nvSRAM (512 K × 8) with QuantumTrap nonvolatile storage. It delivers SRAM read/write performance with hands-off AutoStore on power-down and RECALL on power-up, plus software or HSB pin control for STORE/RECALL. Operates at VCC 3.0–3.6 V and VCCQ 1.65–1.95 V over -40°C to 85°C. BA45 supports 45 ns access, 1M STORE cycles, and 20-year data retention in a 48-ball FBGA.

Infineon Technologies CY14V104LA-BA45XI Product Info

16 April 2026 0

Parameters

Density

4 MBit

Interfaces

Parallel

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

2.7 V to 3.6 V

Organization (X x Y)

512Kb x 8

Peak Reflow Temp

260 °C

Qualification

Industrial

Speed

45 ns

Features

  • 25 ns or 45 ns access time
  • AutoStore on power-down
  • STORE via software or device pin
  • RECALL via software or power-up
  • 1,000 K non-volatile STORE cycles
  • 20-year data retention
  • VCC 3.0 V to 3.6 V core supply
  • VCCQ 1.65 V to 1.95 V I/O supply
  • VCAP capacitor 61 uF to 180 uF
  • AutoStore current (ICC4) max 8 mA
  • Standby current ISB max 8 mA
  • CMOS I/O levels (VIH 0.7×VCCQ)

Description

  • Automatic backup on power loss
  • Fast reads for real-time data
  • Flexible save control options
  • Quick restart with power-up RECALL
  • Supports frequent non-volatile saves
  • Retains critical data long-term
  • Fits standard 3.3 V power rails
  • Interfaces directly to 1.8 V logic
  • Simple hold-up cap design on VCAP
  • Eases PSU sizing during AutoStore
  • Cuts idle power in standby mode
  • Easy MCU interface with CMOS levels

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