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CY14B116N-Z30XI
  • CY14B116N-Z30XI

CY14B116N-Z30XI

The CY14B116N-Z30XI is a 16-Mbit nvSRAM organized as 1024K × 16, combining SRAM with QuantumTrap nonvolatile storage. It operates from 2.7 V to 3.6 V over –40°C to +85°C and supports 30-ns access. It offers 1 million STORE cycles and 20-year data retention. Data is automatically STORED on power-down using a 19.8–82.0 µF VCAP capacitor and RECALLED on power-up, with software or HSB pin control.

Infineon Technologies CY14B116N-Z30XI Product Info

16 April 2026 0

Parameters

Density

16384 kBit

Interfaces

Parallel

Lead Ball Finish

Pure Sn

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

2.7 V to 3.6 V

Organization (X x Y)

1Mb x 16

Peak Reflow Temp

260 °C

Qualification

Industrial

Speed

30 ns

Features

  • 16-Mbit nvSRAM, SRAM interface
  • AutoStore on power-down via VCAP
  • STORE via software or HSB pin
  • RECALL via software or power-up
  • QuantumTrap nonvolatile cell tech
  • 1M STORE cycles to QuantumTrap
  • 20-year data retention
  • Infinite SRAM R/W/RECALL cycles
  • Sleep mode current 10 µA max
  • Power-up RECALL duration 30 ms
  • STORE cycle duration 8 ms
  • VCAP capacitor 19.8 µF to 82 µF

Description

  • Retains data through power loss
  • No battery needed for retention
  • Flexible save/restore control
  • Fast restart after power returns
  • High endurance for frequent saves
  • No wear-out from SRAM writes
  • Long service life for stored data
  • Sleep cuts idle power drain
  • 10 µA sleep suits low-power systems
  • Predictable shutdown save time
  • Simple hold-up cap eases design
  • Blocks access during STORE/RECALL

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