0
BSZ100N03MS G
  • BSZ100N03MS G

BSZ100N03MS G

Active

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)

Infineon Technologies BSZ100N03MS G Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.18

Ciss

1300 pF

Coss

440 pF

ID (@25°C) max

40 A

IDpuls max

160 A

Operating Temperature range

-55 °C to 150 °C

Package

PQFN 3.3 x 3.3

Polarity

N

Ptot max

30 W

QG (typ @4.5V)

8.3 nC

QG (typ @10V)

17 nC

RDS (on) (@10V) max

9.1 mΩ

RDS (on) (@4.5V) max

11.4 mΩ

RDS (on) (@4.5V LL) max

11.4 mΩ

RthJC max

4.1 K/W

Rth

4.1 K/W

Special Features

Logic Level

VDS max

30 V

VGS(th) range

1 V to 2 V

VGS(th)

1.56 V

Features

  • Ultra low gate and output charge
  • Lowest on-state resistance
  • Easy to design-in

Description

  • Increased battery lifetime
  • Improved EMI behavior
  • Saving costs
  • Space saving
  • Reducing power losses

Subscribe to Welllinkchips !
Your Name
* Email
Submit a request