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BSZ009NE2LS5
  • BSZ009NE2LS5

BSZ009NE2LS5

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Infineon extends its’ high performance MOSFET portfolio with BSZ009NE2LS5 OptiMOS™ 5 25V power MOSFET in the small PQFN 3.3x3x3 mm package. This device offers industry’s lowest RDS(on) of 0.9mΩ at 10V and is targeting mainly Or-ing and load switching applications.

Infineon Technologies BSZ009NE2LS5 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.58

ID (@ TC=25°C) max

223 A

ID (@25°C) max

223 A

IDpuls max

892 A

Operating Temperature range

-55 °C to 150 °C

Package

PQFN 3.3 x 3.3 Fused Lead

Pin Count

8 Pins

Polarity

N

Ptot max

69 W

QG (typ @10V)

92 nC

QG (typ @4.5V)

52 nC

RDS (on) (@10V) max

0.9 mΩ

RDS (on) (@4.5V) max

1.2 mΩ

Special Features

Logic Level, ORing/Efuse

VDS max

25 V

VGS(th) range

1.2 V to 2 V

VGS(th)

1.6 V

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