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BSO080P03NS3 G
  • BSO080P03NS3 G

BSO080P03NS3 G

Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Infineon Technologies BSO080P03NS3 G Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.37

Ciss

4500 pF

Coss

2100 pF

ID (@25°C) max

14.8 A

IDpuls max

48 A

Operating Temperature max

150 °C

Operating Temperature min

-55 °C

Package

SO-8

Polarity

P

Ptot max

1.6 W

QG (typ @10V)

61 nC

RDS (on) (@10V) max

8 mΩ

Rth

110 K/W

VDS max

-30 V

VGS(th)

-2.5 V

Features

  • Enhancement mode
  • Normal level, logic level or super logic level
  • Avalanche rated
  • Pb-free lead plating
  • RoHS compliant 

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