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BSC065N06LS5
  • BSC065N06LS5

BSC065N06LS5

Active and preferred

Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.

Infineon Technologies BSC065N06LS5 Product Info

16 April 2026 1

Parameters

Budgetary Price €/1k

0.36

ID (@25°C) max

64 A

IDpuls max

256 A

Mounting

SMD

Operating Temperature range

-55 °C to 150 °C

Package

SuperSO8 5x6

Pin Count

8 Pins

Polarity

N

Ptot max

46 W

Qgd

3.3 nC

QG (typ @4.5V)

10 nC

RDS (on) (@10V) max

6.5 mΩ

RDS (on) (@4.5V) max

9.2 mΩ

RDS (on) (@4.5V LL) max

9.2 mΩ

RthJA max

50 K/W

RthJC max

2.7 K/W

Rth

2.7 K/W

Special Features

Logic Level

VDS max

60 V

VGS(th) range

1.1 V to 2.3 V

VGS(th)

1.7 V

Apps

Electric vehicle drivetrain system, Telecommunications infrastructure, General purpose motor drive, Domestic robots, Power conversion

Features

  • Low R DS(on) in small package
  • Low gate charge
  • Lower output charge
  • Logic level compatibility

Description

  • Higher power density designs
  • Higher switching frequency
  • Reduced part count with 5V supplies
  • Driven directly from microcontrollers
System cost reduction

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