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BSC019N08NS5
  • BSC019N08NS5

BSC019N08NS5

This OptiMOS™ 5 MOSFET in SuperSO8 enables high power density and improved robustness, responding to the need for lower system cost and increased performance. This product is specially designed for synchronous rectification for telecom and server power supplies. Low reverse-recovery charge (Qrr) improves the system reliability by reducing the voltage overshoot, minimizing the need for snubber circuits, resulting in cost savings.

Infineon Technologies BSC019N08NS5 Product Info

16 April 2026 0

Parameters

Battery voltage

36-48 V

Budgetary Price €/1k

1.8

ID (@25°C) max

237 A

IDpuls max

948 A

Operating Temperature range

-55 °C to 175 °C

Package

SuperSO8 5x6

Polarity

N

Ptot max

214 W

QG (typ @10V)

94 nC

RDS (on) (@10V) max

1.9 mΩ

VDS max

80 V

VGS(th) range

2.2 V to 3.8 V

VGS(th)

3 V

Apps

Light electric vehicle solutions, Consumer electronics, DIN rail power supply solutions, Power conversion

Features

  • Lowest RDS(on) enables highest power density and efficiency
  • Higher operating temperature rating to 175° C for increased reliability
  • Low RthJC for excellent thermal behavior
  • Lower reverse recovery charge (Qrr)

Description

  • Lower full load temperature
  • Less paralleling
  • Reduced overshoot
  • Increased system power density
  • Smaller size
  • System cost reduction
  • Engineering costs and effort reduction

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