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BGA8V1BN6
  • BGA8V1BN6

BGA8V1BN6

The BGA8V1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 3.3 GHz to 3.8 GHz. The LNA provides 15.0 dB gain and 1.2 dB noise figure at a current consumption of 4.2mA. In bypass mode the LNA provides an insertion loss of 5.3 dB.The BGA8V1BN6 is based upon Infineon Technologies B9HF Silicon Germanium technology. It operates from 1.6 V to 3.1 V supply voltage. The device features a multi-state control (OFF-, bypass- and high gain-Mode).

Infineon Technologies BGA8V1BN6 Product Info

16 April 2026 0

Parameters

Frequency

3300 - 3800 MHz

Gain

15 dB

I

4.2 mA

IIP3

-3 dBm

NF

1.2 dB

P-1dB (in)

-15 dBm

VCC operating range

1.6 V to 3.1 V

Features

  • Insertion power gain: 15.0 dB
  • Insertion Loss in bypass mode: 5.3 dB
  • Low noise figure: 1.2dB
  • Low current consumption: 4.2mA
  • Operating frequencies: 3.3 - 3.8 GHz
  • Multi-state control: OFF-, bypass- and high gain-Mode
  • Supply voltage: 1.6 V to 3.1 V
  • Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
  • B9HF Silicon Germanium technology
  • RF input and RF output internally matched to 50 Ohm
  • No external SMD components necessary
  • 2kV HBM ESD protection (including AI-pin)
  • Pb-free (RoHS compliant) package

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