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BGA7L1N6
  • BGA7L1N6

BGA7L1N6

Silicon Germanium Low Noise Amplifier for LTE

Infineon Technologies BGA7L1N6 Product Info

16 April 2026 0

Parameters

Frequency

716 - 960 MHz

Gain

13.3 dB

I

4.5 mA

IIP3

0 dBm

NF

0.9 dB

P-1dB (in)

-3 dBm

VCC operating range

1.5 V to 3.3 V

Features

  • Insertion power gain: 13.3 dB
  • Low noise figure: 0.90 dB
  • Low current consumption: 4.4 mA
  • Operating frequencies: 728 - 960 MHz
  • Supply voltage: 1.5 V to 3.3 V
  • Digital on/off switch (1V logic high level)
  • Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
  • B7HF Silicon Germanium technology
  • RF output internally matched to 50 Ω
  • Only 1 external SMD component necessary
  • 2kV HBM ESD protection (including AI-pin)
  • Pb-free (RoHS compliant) package

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