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BGA7H1BN6
  • BGA7H1BN6

BGA7H1BN6

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BGA7H1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 1805 MHz to 2690 Mhz and operates from1.5 V to 3.3 V supply voltage. The device features a single-line two-state control (Bypass- and High gain-Mode) and OFF-state can be enabled by powering down Vcc

Infineon Technologies BGA7H1BN6 Product Info

16 April 2026 0

Parameters

Frequency

1805-2200 MHz

Gain

12.3 dB

I

4.3 mA

IIP3

2 dBm

NF

0.85 dB

P-1dB (in)

-3 dBm

VCC operating range

1.5 V to 3.6 V

Apps

Mobile device and smartphone solutions, Consumer Wearables

Features

  • Insertion power gain: 12.3 dB
  • Low noise figure: 0.85 dB
  • Low current consumption: 4.3 mA
  • Insertion loss in bypass mode: -3.1 dB
  • Operating frequencies: 1805 - 2690 MHz
  • Two-state control: Bypass- and high gain-mode
  • Supply voltage: 1.5 V to 3.6 V
  • Digital on/off switch (1V logic high level)
  • Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
  • B7HF Silicon Germanium technology
  • RF output internally matched to 50 Ω
  • Only 1 external SMD component necessary
  • Pb-free (RoHS compliant) package

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