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BFP740FESD
  • BFP740FESD

BFP740FESD

The BFP740FESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) with an integrated ESD protection

Infineon Technologies BFP740FESD Product Info

16 April 2026 0

Parameters

fT

47 GHz

Gmax

29.50 dB @900 MHz

IC max

45 mA

NFmin

0.55 dB @900 MHz

OIP3 (@900 MHz)

24 dBm

OP1dB (@900 MHz)

10 dBm

Package

TSFP-4

Ptot

160 mW

VCEO max

4.2 V

Features

  • Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power,  2 kV ESD robustness (HBM) due to integrated protection circuits
  • NFmin = 0.6 dB at 2.4 GHz and 0.8 dB at 5.5 GHz, 3V, 6 mA
  • High gain Gms = 26 dB at 2.4 GHz and Gma = 20.5 dB at 5.5 GHz, 3V, 25 mA
  • OIP3 = 23.5 dBm at 5.5 GHz, 25 mA
  • Low profile and small form factor leadless package

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