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BFP650
  • BFP650

BFP650

High Linearity Low Noise SiGe:C NPN RF Transistor

Infineon Technologies BFP650 Product Info

16 April 2026 0

Parameters

Gmax

26.50 dB @900 MHz

IC max

150 mA

NFmin

0.80 dB @900 MHz

OIP3

31 dBm @900 MHz

OP1dB

17 dBm @900 MHz

Package

SOT343

VCEO max

4 V

Features

  • Highly linear low noise driver amplifier for all RF frontends up to 4.5 GHz
  • Output compression point OP1dB = 17 dBm at 70 mA, 3V, 2.4 GHz, 50Ω system
  • Output 3rd order intermodulation point OIP3 = 30 dBm at 70 mA, 3 V, 2.4 GHz, 50 Ω system
  • Maximum available gain Gma = 17.5 dB at 70 mA, 3V, 2.4 GHz
  • Minimum noise figure NFmin = 1 dB at 30 mA, 3V, 2.4 GHz
  • Based on Infineon´s reliable, high volume SiGe:C wafer technology
  • Easy to use Pb-free (RoHS compliant) standard package with visible leads

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