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BCR35PN
  • BCR35PN

BCR35PN

NPN/PNP Silicon Digital Transistor Array

Infineon Technologies BCR35PN Product Info

16 April 2026 0

Parameters

fT

150 MHz

hFE min

70

ICBO max

100 nA

Mounting

SMT

Polarity

NPN/PNP (Dual)

Ptot max

250 mW

R1 / R2

0.21

R1

10 kΩ

R2

47 kΩ

VCBO max

50 V

VCE(sat) max

0.3 V

VCEO max

50 V

VEBO max

6 V

Vi (off) max

1 100µA / 5V

Vi (on) max

1 V

Vi (on) min

0.5 2mA / 0.3V

Features

  • Switching circuit, inverter, interface circuit, driver circuit
  • Two (galvanic) internal isolated NPN/PNP Transistors in one package
  • Built in bias resistor NPN and PNP (R1=10 kΩ, R2=47 kΩ)
  • Pb-free (ROHS compliant) package
  • Qualified according AEC Q101

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