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BCR169
  • BCR169

BCR169

PNP Silicon Digital Transistor

Infineon Technologies BCR169 Product Info

16 April 2026 0

Parameters

fT

200 MHz

hFE range

120 to 630

ICBO max

100 nA

Mounting

SMT

Polarity

PNP (Single)

Ptot max

200 mW

R1

4.7 kΩ

VCBO max

50 V

VCE(sat) max

0.3 V

VCEO max

50 V

VEBO max

5 V

Vi (off) max

0.8 100µA / 5V

Vi (on) max

0.8 V

Vi (on) min

0.5 2mA / 0.3V

Features

  • Switching circuit, inverter, interface circuit, driver circuit
  • Built in bias resistor (R1 = 4.7 kΩ)
  • BCR169S: Two internally isolated transistors with good matching in one multichip package
  • BCR169S: For orientation in reel see package information below
  • Pb-free (RoHS compliant) package
  • Qualified according AEC Q101

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