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BCR108
  • BCR108

BCR108

NPN Silicon Digital Transistor

Infineon Technologies BCR108 Product Info

16 April 2026 0

Parameters

fT

170 MHz

hFE min

70

ICBO max

100 nA

Mounting

SMT

Polarity

NPN (Single)

Ptot max

200 mW

R1 / R2

0.047

R1

2.2 kΩ

R2

47 kΩ

VCBO max

50 V

VCE(sat) max

0.3 V

VCEO max

50 V

VEBO max

5 V

Vi (off) max

0.8 100µA / 5V

Vi (on) max

0.8 V

Vi (on) min

0.5 2mA / 0.3V

Features

  • Switching circuit, inverter, interface circuit, driver circuit
  • Built in bias resistor (R1=2.2 kΩ, R2=47 kΩ)
  • BCR108S: Two internally isolated transistors with good matching in one multichip package
  • BCR108S: For orientation in reel see package information below
  • Pb-free (RoHS compliant) package
  • Qualified according AEC Q101

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