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BC857S
  • BC857S

BC857S

PNP Silicon AF Transistor Arrays

Infineon Technologies BC857S Product Info

16 April 2026 1

Parameters

fT

250 MHz

hFE range

200 to 630

ICBO max

15 nA

IC max

100 mA

IC

100 mA

ICM max

200 mA

Mounting

SMT

Package

P-SOT363-6-1

Polarity

PNP (Dual)

Ptot max

250 mW

VCBO max

50 V

VCE(sat) max

0.65 V

VCEO max

45 V

VEBO max

5 V

Features

  • High current gain
  • Low collector-emitter saturation voltage
  • Two (galvanic) internal isolated transistor with good matching in one package
  • BC856S / U, BC857S: For orientation in reel see package information below
  • Pb-free (RoHS compliant) package
  • Qualified according AEC Q101

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