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BAT24-02LS
  • BAT24-02LS

BAT24-02LS

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Infineon RF Schottky Diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage diode and low junction capacitance, make BAT24 - 02LS a suitable choice for mixer and detector functions in applications whose frequencies are as high as 24 GHz

Infineon Technologies BAT24-02LS Product Info

16 April 2026 0

Parameters

C @VR=0V

0.2 pF

Configuration

Single

IF max

110 mA

VF

0.25 V

VR max

4 V

Features

  • Low inductance LS = 0.2 nH (typical)
  • Low capacitance C = 0.2 pF (typical) at 1 MHz
  • TSSLP-2-1 package (0.62 mm x 0.32 mm x 0.31 mm) with a 0201 footprint
  • Pb-free (RoHS compliant) and halogen free

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