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BAT15-02EL
  • BAT15-02EL

BAT15-02EL

Active and preferred

This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-02EL a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.

Infineon Technologies BAT15-02EL Product Info

16 April 2026 0

Parameters

C @VR=0V

0.2 pF

Configuration

Single

IF max

110 mA

VF max

0.32 V

VF

0.25 V

VR max

4 V

Apps

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