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BAR81W
  • BAR81W

BAR81W

This Infineon cost optimized RF PIN diode is designed for high performance switches. Its shunt configuration results in reduces parasitic inductance and is mostly suited for high-speed switching applications.

Infineon Technologies BAR81W Product Info

16 April 2026 0

Parameters

C @VR=0V

0.61 pF

Configuration

Single shunt diode

IF max

100 mA

RF

0.58 Ω

trr

80 ns

VR max

30 V

Features

  • Optimized for short - open transformation using λ/4 transmission lines
  • Reduced impact of parasitic inductance due to design
  • High shunt signal isolation ISO = 27 dB (typical) at forward current IF = 1 mA and frequency f = 1 GHz
  • Low shunt insertion loss IL = 0.17 dB (typical) at voltage VR = 0 V and frequency f = 1 GHz
  • Charge carrier lifetime τ = 80 ns (typical)
  • Industry standard SOT343 package (2.0 mm xm 2.1 mm x 0.9 mm)
  • Pb-free, RoHS compliant and halogen-free

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