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AIMBG120R080M1
  • AIMBG120R080M1

AIMBG120R080M1

Active and preferred

With Infineon’s performance optimized chip technology (Gen1p), the SiC MOSFET features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.

Infineon Technologies AIMBG120R080M1 Product Info

16 April 2026 0

Parameters

Ciss

671 pF

Coss

35 pF

ID (@25°C) max

30 A

Launch year

2023

Operating Temperature range

-55 °C to 175 °C

Package

TO-263-7

Planned to be available until at least

2033

Polarity

N

Ptot (@ TA=25°C) max

168 W

QG

24 nC

Qualification

Automotive

RDS (on) (@ Tj = 25°C)

80 mΩ

RthJC max

0.89 K/W

Technology

CoolSiC™ G1

VDS max

1200 V

VGSS, off

0

VGSS, on

20

Apps

Electric vehicle drivetrain system, DC-DC converter high-voltage, On-board charging (OBC), Automotive e-compressor - high-voltage

Features

  • Revolutionary semiconductor material - Silicon Carbide
  • Very low switching losses
  • Threshold-free on state characteristic
  • 0V turn-off gate voltage
  • Benchmark gate threshold voltage, VGS(th)=4.5V
  • Fully controllable dv/dt
  • Commutation robust body diode, ready for synchronous rectification
  • Temperature independent turn-off switching losses
  • Sense pin for optimized switching performance
  • Suitable for HV creepage requirements
  • XT interconnection technology for best-in-class thermal performance

Description

  • Efficiency improvement
  • Enabling higher frequency
  • Increased power density
  • Cooling effort reduction
  • Reduction of system complexity and cost

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