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AIKYX200N75CP2
  • AIKYX200N75CP2

AIKYX200N75CP2

Active and preferred

The AIKYX200N75CP2 discrete IGBT in a 4-Pin TO247PLUS package with 750V EDT2 technology is ideal for automotive applications. It supports up to 470V battery voltages, safe fast switching and 30% reduced turn on energy loss compared to 3-pin devices. Its qualified reflow-solderable package enables innovative assembly solutions for up to 40% better thermal conductivity and highest power output on a system level.

Infineon Technologies AIKYX200N75CP2 Product Info

16 April 2026 0

Parameters

Co-pack diode technology

EMCON3

Eon

7.6 mJ

IC (@ 25°) max

250 A

IC (@ 100°) max

200 A

ICpuls max

600 A

IF max

200 A

IFpuls max

600 A

Irrm

68.4 A

Launch year

2024

Package

TO-247PLUS-4

Planned to be available until at least

2033

Ptot max

938 W

QGate

1270 nC

Qrr

6.1 nC

Reflow Solderable

Yes

Switching Frequency

7kHz - 15kHz

td(off)

268 ns

td(on)

79 ns

Technology

EDT2

tf

58 ns

tr

44 ns

Type

IGBT + Diode

VCE(sat) max

1.55 V

VCE(sat)

1.37 V

VCE max

750 V

VF

1.8 V

Features

  • Best-in-class 750 V TO247PLUS
  • Suitable for 470 V VDC systems
  • Very low VCEsat
  • Short circuit robust tsc = 3 µs
  • Qualified Reflow device at 260°C
  • Self limiting short-circuit current
  • Very tight parameter distribution
  • Low gate charge QG
  • Wide Power pins 2 mm
  • Resistive weldable pins
  • High creepage distance
  • Product Validation acc. to AEC-Q101

Description

  • Benchmark quality & switching behavior
  • Ideal for automotive requirements
  • Excellent parallel operation
  • High reliability and operating lifetime
  • Low switching losses and cooling effort
  • Various power classes - same package
  • Power scalability and cost optimization
  • High power output by reflow-soldering
  • Low costs per Ampere on system level
  • Low EMI signature
  • Simple gate drive design
  • Higher efficiency with Kelvin emitter

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