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AIKQ120N75CP2
  • AIKQ120N75CP2

AIKQ120N75CP2

Active and preferred

The automotive IGBT discrete AIKQ120N75CP2 is a high-performance EDT2 IGBT with a co-packed diode in the TO247PLUS package. Its 750V EDT technology enables battery voltages up to 470V, improving energy efficiency and cooling in high voltage automotive applications. With increased overvoltage margins, it allows safe fast switching and easy paralleling operation. Ideal for existing designs, it offers 120A nominal current and power scalability.

Infineon Technologies AIKQ120N75CP2 Product Info

16 April 2026 0

Parameters

Co-pack diode technology

EMCON3

Eon

6.82 mJ

IC (@ 25° ) max

150 A

IC (@ 100°) max

120 A

ICpuls max

360 A

IF max

120 A

IFpuls max

360 A

Irrm

33 A

Launch year

2022

Package

TO-247-3

Planned to be available until at least

2033

Ptot max

682 W

QGate

731 nC

Qrr

3600 nC

Reflow Solderable

No

Switching Frequency

7kHz - 15kHz

td(off)

244 ns

td(on)

71 ns

Technology

EDT2

tf

50 ns

tr

69 ns

Type

IGBT + Diode

VCE(sat)

1.3 V

VCE max

750 V

VF

1.7 V

Voltage Class max

750 V

Apps

Automotive, Electric vehicle drivetrain system, EV traction inverter, Automotive e-compressor - high-voltage

Features

  • VCE = 750 V
  • 750 V collector-emitter blocking voltage
  • Smooth switching characteristics
  • Very low VCE(sat),1.30 V (typ.)
  • Short circuit robust
  • Very tight parameter distribution
  • Fast soft rec Emitter Controlled 3 diode
  • Qualified according to AEC-Q101
  • Increase OV margin in application
  • Reduction of # of paralleled devices req
  • Simple gate drive design

Description

  • Benchmark qual & switching perf 470V Vdc
  • High CreepDist fills ATV V reqs 470V Vdc
  • Extremely robust fulfilling mission reqs
  • High switch freq -> less switch losses
  • Paralleling->=prod for diff power class

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